MoO3 Crystal

SKU:
BLK-MoO3-BGM
Condition:
New
  • Large size Bridgman grown MoO3 crystals
  • Large size Bridgman grown MoO3 crystals
  • Crystal structure of MoO3
  • MoO3 Crystal
  • MoO3 Crystal
  • Large size MoO3 crystals
  • Large size CVT grown MoO3 crystals
$690.00
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Description

a-MoO3 is a layered vdW semiconductor with a crystal structure that belongs to the space group Pbnm 62 (see unit cell parameters below). It is layered and as easy to exfoliate as MoS2 or graphite. In its layered form, Each layer has three atomic thick arrangement consisting of MoO6 octahedra layers as shown in the diagram in product images. The material is environmentally stable in air, water, and different gases. Layers can easily exfoliated onto desired substrates with minimal efforts as shown in the product images. Bridgman grown crystals are larger in size and higher in quality. 

General characteristics of a-MoO3 crystals

Sample size Each order contains large sized crystals (see images)
Material properties 2D oxide, quantum emitter, 2D insulator
Crystal structure a-phase
Degree of exfoliation Easy to exfoliate
Production method Bridgman (recommended) or CVT growth 
Bridgman crystals are higher crystal quality and purity
Other characteristics
  • 1E10cm-2 or less defects
  • High 6N (99.9999%) purity 
  • Easy exfoliation characteristics 
  • Single crystalline
  • No hidden phases

 Raman spectrum collected from high crystalline MoO3 crystals

 a-moo3-crystal-raman-spectroscopy.png

XRD data collected from MoO3 crystals

a-moo3-crystal-xrd.png

Transmission electron microscopy characterization on MoO3 crystals

                      moo3-transmission-electron-microscopy.png

Atomic depiction of MoO3 layers

                                         moo3-layered.png

 

References

Low-Loss Anisotropic Image Polaritons in van der Waals Crystal α-MoO3
Advanced Optical Materials
https://doi.org/10.1002/adom.202201492

Nanoscale‐Confined Terahertz Polaritons in a van der Waals Crystal,
Advanced Materials doi.org/10.1002/adma.202005777 (2020)

Kitchaev et.al. Phys. Rev. B 93, 045132 (2016)

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Additional Information

Elements:
Mo,O
Element:
Molybdenum
Element:
Oxygen
Formula:
MoO3
Material class:
MX3
Material class:
Oxide
Material class:
Quasi-1D
Properties:
Semiconductor
Properties:
Excitonic
Band gap range:
VIS
Band gap range:
UV
Growth method:
Bridgman
Growth method:
CVT
Doping:
Undoped
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