SnSe Crystal

SKU:
BLK-SnSe
Condition:
New
  • 1 cm size high quality SnSe tin selenide crystals by 2Dsemiconductors USA
  • Raman of SnSe Tin selenide crystals by 2Dsemiconductors USA
  • XRD of SnSe Tin selenide crystals by 2Dsemiconductors USA
$590.00
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Description

We provide the world's largest size commercially available SnSe crystals at the highest quality SnSe and affordable prices. Our crystals exceed competing crystals both in size and quality.

Description

In the bulk form SnSe has band-gap at around 0.9 eV (indirect) and 1.25 direct gaps. It has layered structure (lamellar) with weak interlayer coupling, enabling to isolate down to monolayers. Each monolayer is four atoms thick (Se-Sn-Sn-Se) that is roughly 0.9-1.0 nm. At high pressures it undergo semiconductor to superconductor transition. More recently, SnSe has been shown to display world record performance for thermoelectric material efficiency. By default, we ship flux zone grown crystals for highest performance.

SnSe single crystal characteristics

Sample size Centimeter in size
Material properties Thermoelectric and anisotropic semiconductor 
Crystal structure Pnma
Degree of exfoliation Easy to exfoliate
Production method Bridgman growth (6N pure) [CVT optional at 5.5N purity]
Other characteristics
  • No transport agents 
  • Low defect concentration
  • High carrier mobility

Raman spectrum collected from SnSe crystals

snse-raman.png

References

Functional Monochalcogenides: Raman Evidence Linking Properties, Structure, and Metavalent Bonding
Christophe Bellin, Amit Pawbake, Lorenzo Paulatto, Keevin Béneut, Johan Biscaras, Chandrabhas Narayana, Alain Polian, Dattatray J. Late, and Abhay Shukla
Phys. Rev. Lett. 125, 145301 (2020)

 

 

 

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Additional Information

Elements:
Sn,Se
Element:
Tin
Element:
Selenium
Formula:
SnSe
Material class:
MX
Properties:
Semiconductor
Properties:
Thermoelectric
Band gap range:
IR
Growth method:
Bridgman
Growth method:
CVT
Doping:
Undoped
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