TlInS2 Crystal

SKU:
BLK-TlInS2
Condition:
New
  • TlInS2 crystals : 1 cm large size high quality 2D crystals - 2Dsemiconductors USA
  • TlInS2 crystals : 1 cm large size high quality 2D crystals - 2Dsemiconductors USA
  • TlInS2 crystals : 1 cm large size high quality 2D crystals - 2Dsemiconductors USA
  • Raman spectum of TlInS2 crystals : 1 cm large size high quality 2D crystals - 2Dsemiconductors USA
$590.00
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Description

The only commercially available TlInS2 vdW crystals have been synthesized at our facilities through float zone technique. TlInS2 semiconductors belong to the thallium chalcogenides family with the chemical formula TlBX2 (where B=In or Ga, X=S, Se or Te). Members of this family have both layered (TlGaSe2, TlGaS2, TlInS2) and chain (TlInSe2, TlInTe2, TlGaTe2) structures. Stacking of the atoms in TlGaSe2, TlGaS2 and TlInS2 layered crystals is arranged in the form of two twisted anionic layers with the weak bonded Tl(+1) cations located in the trigonal cavities between them. As a result, these crystals exhibit layered structure with weak vdW coupling between the adjacent layers. In particular, TlInS2 is a direct gap semiconductor with optical band gap of 3.5 eV, it exhibits rather novel ferroelectric, ferroelastic behavior. Owing to its crystal structure it is also known to be second harmonic generation (SHG) semiconductor.

Properties of TlInS2 crystals

Sample size ~1 cm in size
Material properties Ferroelectric, ferroelastic, SHG semiconductor, anisotropic
Crystal structure Monoclinic
Growth method Float zone technique
purity 99.9999% guaranteed
Characterization XRD, XPS, AES, SIM, and HRTEM

 

Raman spectrum of TlInS2 crystals

tlins2-raman-spectrum.png

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Additional Information

Elements:
Tl,In,S
Element:
Thallium
Element:
Indium
Element:
Sulfur
Formula:
TlInS2
Material class:
MX
Material class:
Alloy
Properties:
Semiconductor
Properties:
High mobility
Band gap range:
IR
Growth method:
Bridgman
Doping:
Undoped
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