Bi2S3 Crystal

SKU:
BLK-BI2S3
Condition:
New
  • Large size vdW crystals of Bi2S3  crystals - 2Dsemiconductors USA
  • Large size vdW crystals of Bi2S3  crystals - 2Dsemiconductors USA
  • Bi2S3 Crystal
  • Bi2S3 Crystal
  • Purity information on  Bi2S3 crystals by 2Dsemiconductors USA
  • XRD data collected from Bi2S3 crystals
$590.00
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Description

Bismuth sulfide (Bi₂S₃) Developed at our facilities in the last five (5) years to optimize the perfect stoichiometry. Bi2S3 has layered (lamellar) structure much similar to other 2D crystals such as graphite, MoS2, and Sb2Te3. They can be exfoliated down to monolayers through standard mechanical exfoliation technique. Bi2S3 is stabilized in orthorhombic phase and has semiconducting behavior (~1.35 eV gap). Bi2S3 crystals come with perfect 0001 basal plane cleavage meaning it is ready for exfoliation without any further processing. The crystals were characterized and confirmed by x-ray diffraction (XRD), x-ray photoelectron spectroscopy, Raman, photoluminescence, SIMS, and Auger electron spectroscopy techniques.

Properties of vdW Bi2S3 crystals 

Sample size Centimeter scale
Material properties Semiconductor
Crystal structure Monoclinic phase
Unit cell parameters a=0.403, b=1.113 nm, c=1.138 nm, α=β=90°
Growth method [Default] Bridgman growth technique (structurally perfect)
[Optional] Flux zone (no halide contamination) defect free
Purity 99.9999% confirmed

 

XRD data from Bi2S3 crystals

bi2s3-xrd-data.png

 Raman spectrum from Bi2S3 crystals - 2Dsemiconductors USA

bi2s3-raman-spectrum.png

PL spectrum from Bi2S3 crystals - 2Dsemiconductors USA 

bi2s3-pl-spectrum.png

Purity analysis (SIMS) from Bi2S3 crystals - 2Dsemiconductors USA

bi2s3-purity-analysis-by-sims.png

 

 

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Additional Information

Elements:
Bi,S
Element:
Bismuth
Element:
Sulfur
Formula:
Bi2S3
Material class:
M2X3
Properties:
Semiconductor
Band gap range:
VIS
Growth method:
Bridgman
Growth method:
Flux
Doping:
Undoped
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