Description
Gallium indium trisulfide or GaInS3 is a layered vdW semiconductor. Its electronic, magnetic, and optical properties from bulk to monolayer form still remains largely unknown. Our GaInS3 crystals have been synthesized at 5.8N purity and high single crystalline quality using flux zone growth technique. Resulting crystals are environmentally stable and are ready for exfoliation.
The properties of GaInS3 layered crystals
| Sample size | Each order contains a number of ~5mm sized crystal |
| Material properties | 2D semiconductor |
| Crystal structure | Orthorhombic layered phase |
| Degree of exfoliation | Easy to exfoliate |
| Production method | Flux growth technique |
| Other characteristics |
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Additional Information
Elements: |
Ga,In,S |
Element: |
Gallium |
Element: |
Indium |
Element: |
Sulfur |
Formula: |
GaInS3 |
Material class: |
M2X3 |
Properties: |
Semiconductor |
Band gap range: |
VIS |
Band gap range: |
IR |
Growth method: |
Flux |
Doping: |
Undoped |
