Description
SiTe2 is a new layered crystal produced by 2Dsemiconductors using conventional chemical vapor transport technique (CVT) at 99,9995% purity rating. SiTe2 currently remains largely unexplored and many exciting properties are awaiting to be discovered. Early theoretical predictions show that they exhibit unique thermal conduction and electronic transport properties. Currently, each order contains one single crystal that measures a few mm in size (~3-4mm) due to its hard growth characteristics.
The properties of vdW SiTe2 crystals
| Sample size | Each order contains ~-2-4mm sized crystals |
| Material properties | 2D metals |
| Crystal structure | 1T phase |
| Unit cell parameters | a=b=0.37; c=0.734 nm; α=β=90°; γ=120° |
| Production method | Chemical vapor transport (99.9995% purity) |
| Other characteristics |
Environmentally stable Very easy to exfoliate |
Additional Information
Elements: |
Si,Te |
Element: |
Silicon |
Element: |
Tellurium |
Formula: |
SiTe2 |
Material class: |
MX2 |
Material class: |
Quasi-1D |
Properties: |
Semiconductor |
Band gap range: |
VIS |
Growth method: |
CVT |
Doping: |
Undoped |
