TlGaTe2 Crystal

SKU:
BLK-TlGaTe2
Condition:
New
  • TlGaTe2 crystals : Large size high quality 2D crystals - 2Dsemiconductors USA
  • TlGaTe2 crystals : Large size high quality 2D crystals - 2Dsemiconductors USA
$620.00
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Description

The only commercially available TlGaTe2 vdW crystals have been synthesized at our facilities through float zone technique. TlGaTe2 semiconductors belong to the thallium chalcogenides family with the chemical formula TlBX2 (where B=In or Ga, X=S, Se or Te). Members of this family have both layered (TlGaSe2, TlGaS2, TlInS2) and chain (TlInSe2, TlInTe2, TlGaTe2) structures. Stacking of the atoms in TlGaSe2, TlGaS2 and TlInS2 layered crystals is arranged in the form of two twisted anionic layers with the weak bonded Tl(+1) cations located in the trigonal cavities between them. Recently, low-temperature rhombohedral ordered
phase of Tl-based III–V–VI2 ternary chalcogenides has been predicted to be topologically nontrivial and a terminated surface with a single Dirac cone has been identified through first-principles calculations (Phys. Rev. Lett. 105, 036404). TlGaTe2 crystals exhibit anisotropic structural, electronic, and optical properties with the band gap of 1.2 eV.

Properties of TlGaTe2 layered crystals by 2Dsemiconductors USA

Crystal size 5mm-8mm in size
Material properties Topological semiconductor, phase change
Crystal structure Monoclinic
Growth method Float zone technique
Purity 99.9999% confirmed
Characterization XRD, XPS, AES, SIM, and HRTEM

 

 

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Additional Information

Elements:
Tl,Ga,Te
Element:
Thallium
Element:
Gallium
Element:
Tellurium
Formula:
TlGaTe2
Material class:
MX
Material class:
Alloy
Properties:
Semiconductor
Properties:
High mobility
Band gap range:
IR
Growth method:
Bridgman
Doping:
Undoped
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