Description
ZnIn2S4 is a layered van der Waals material with perfectly layered structure. It has very easy exfoliation characteristics much suited for exfoliation down to large size ultra-thin layers. ZnIn2S4 layers show PL signal at around 700 nm while its response down to monolayers remain still unexplored. Our ZnIn2S4 crystals were synthesized using chemical vapor transport (CVT) technique using elemental precursors at 6N or higher purities to realize electronic, optical, and catalytic grade crystals.
The physical properties of ZnIn2S4 crystals
| Sample size | 0.5- 0.7 cm sized crystals |
| Properties |
2D semiconductor Catalytic material Good photoluminescence |
| Exfoliation characteristics | Very easy |
| Production method | Chemical vapor transport |
Additional Information
Elements: |
Zn,In,S |
Element: |
Zinc |
Element: |
Indium |
Element: |
Sulfur |
Formula: |
ZnIn2S4 |
Material class: |
Phosphide |
Properties: |
Semiconductor |
Properties: |
Excitonic |
Band gap range: |
VIS |
Growth method: |
Flux |
Doping: |
Undoped |
