CuS is a member of metal chalcogenides (see our GaSe and GaTe products). It has a layered structure (lamellar) with weak interlayer coupling. In the bulk form, it is a direct band gap semiconductor with 1.6 eV band gap. Experimentally, monolayers are yet to be discovered. The size of the sample starts at 3mmx3mm goes up to 7mmx7mm and is highly crystalline. Ideal for cleavage.
- Sensors - detectors
- STM – AFM applications
- Solar cells
- Ultra-low friction studies (tribology)
- Materials science and semiconductor research