GeSeTe is a layered phase change 2D anisotropic semiconductors. Much similar to black phosphorus (BPs), GeSe, GeTe, and GaTe, its crystalline structure exhibit highly anisotropic atomic arrangement. It has optical band gap between that of GeSe and GeTe at around 1 eV (1240 nm). The powder is highly crystallized at high temperatures and high pressures over 1 month time frame to achieve full alloying and 50-50% Se to Te composition. Each order contains +1gram highly crystalline powder and grain sizes measure from 100nm to 3 mm in size. Such large variation is intentional to allow for its use as precursors during CVD, PVD, and MBE as well as scientific studies requiring large physical sizes. If you research needs large amount of the powder, coarser or finer powders please contact us.