HfTe2 Crystal

SKU:
BLK-HfTe2
Condition:
New
  • High quality HfSe2 hafnium diselenide crystals by 2Dsemiconductors USA
  • XRD dataset taken from HfTe2 crystals - 2Dsemiconductors USA
$590.00
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Description

Hafnium ditelluride (HfTe2) is a topological semimetal vdW crystal. Our single crystal HfTe2 (hafnium ditelluride) crystals come with guaranteed crystallinity, environmental stability, and electronic/optical grade purity. They are developed at our facilities using state-of-art flux zone techniques. Each growth takes close to three months to provide you perfected crystals that does not contain any halides. Each crystal is highly crystalline, oriented in 0001 direction, and easy to exfoliate. Our R&D staff takes characterization dataset in each sample piece to ensure structural, optical, and electronic consistency. They have been optimized to achieve perfect industrial semiconductor grade materials with: 1) excellent stoichiometry, 2) large single domain size, 3) single phase materials without any mixed phases or amorphous content, 4) perfect layered crystal ideal for exfoliation purposes with impressive mosaic spread 0.08 degrees, 5) unmatched purity -semiconductor grade (6N), 99.9999%. 

Properties of HfTe2 crystals by 2Dsemiconductors USA 

Material properties Semi-metallic / semiconducting in monolayer form
Crystal sturcture Hexagonal phase
Unit cell perameters Monoclinic phase
Unit cell perameters a=b=0.403 nm, c=0.672 nm, α=β=90°, y=120°
Growth method [Default] Flux zone (no halide contamination) defect free
[Optional CVT]: Contains Br2, Cl2, TeCl4, and other halides
Purity 99.9995% confirmed

 

Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice. 

XRD data collected from HfTe2 single crystals

xrd-hfte2-2dsemiconductors.png

 

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Additional Information

Elements:
Hf,Te
Element:
Hafnium
Element:
Tellurium
Formula:
HfTe2
Material class:
MX2
Material class:
Dichalcogen
Properties:
Metal
Properties:
Semimetal
Growth method:
Flux
Growth method:
CVT
Doping:
Undoped
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