OUR PRODUCTS

OUR PRODUCTS

Additional Information

Additional Information

Account Navigation

Account Navigation

Currency - All prices are in AUD

Currency - All prices are in AUD
 Loading... Please wait...
2D Semiconductors

OUR PRODUCTS

OUR PRODUCTS

Synthetic Molybdenum Disulfide (MoS₂)

$410.00

Synthetic Molybdenum Disulfide (MoS₂)

$410.00
SKU:
BLK-MOS2-SYN

Product Description

List of publications out of this product listed below this page.

Single crystal highly oriented -synthetic- molybdenum disulfide (2H-MoS₂) comes in bulk. Synthetic MoS₂ is developed in our laboratories and is superior to the naturally occurring single crystal MoS₂. Typically, synthetic MoS₂ shows high crystallinity, minimal residue / impurities, and the average grain size is larger than naturally occurring MoS₂.

 
The size of the sample starts at 10mmx10mm (perfectly square) and has layered structure (99.5% Bernal stacking [AB] & 0.5% or less rhombohedral stacking [ABC]) with weak interlayer coupling.
 
The sample comes with the data which includes Raman, photoluminescence, and 100x optical images.
 
* If you are looking for doped crystals, please refer to our 'doped 2D semiconductors' category from from the menu *
 
Characterization
Raman spectroscopy: Raman spectroscopy is data is taken on every piece. Typically, flakes show two prominent Raman peaks at 383cm-1 (E2g- in plane-) and 409cm-1 (A1g out-of-plane) and the FWHM (full-width-at-half-maximum) is less than 4-5cm-1 showing highly crystalline nature.
 
Photoluminescence (PL): In the bulk form (2H-MoS2), molybdenum disulfide possess indirect band-gap at 1.3eV. Therefore, PL measurements cannot probe the band-gap directly. However, after illuminating with high laser intensity (hot photoluminescence) PL shows peak at 1.3eV. X-ray diffraction (XRD): XRD measurements display (0001) peak at 14 degrees with 0.03-0.06 FWHM corresponding to the (00L) reflections.
 
Optical Microscope images: Each sample is inspected under the optical microscope for possible defect, contamination, and wearing.
 
Possible applications:
Electronics
Sensors - detectors
Optics
STM - AFM applications
Molecular detection - binding
Ultra-low friction studies (tribology)
Materials science and semiconductor research
 

Publications from this product

Summary: Publications from Cornell, Washington, MIT, Berkeley, Stanford, and Princeton teams at top journals like Nature, Nature Materials, Nature Communications, Nano Letters, and Advanced Materials

Weigao Xu et al., "Correlated fluorescence blinking in two-dimensional semiconductor heterostructures", Nature 541, 62-67 (2017), link to article:
http://www.nature.com/nature/journal/v541/n7635/full/nature20601.html 

Manish Chhowalla team "Phase-engineered low-resistance contacts for ultrathin MoS2 transistors" Nature Materials DOI: 10.1038/NMAT4080

X. Chen "Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures" Nature Communications 6, Article number: 6088 (2015) doi:10.1038/ncomms7088

Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS2, MoSe2, WS2, and WSe2, Yilei Li, Alexey Chernikov, Xian Zhang, Albert Rigosi, Heather M. Hill, Arend M. van der Zande, Daniel A. Chenet, En-Min Shih, James Hone, and Tony F. HeinzPhys. Rev. B 90, 205422 (2014)

H. Wang et.al. "Ultrafast response of monolayer molybdenum disulfide photodetector" Nature Communications 6, Article number: 8831 (2015)

Y. Jin "A Van Der Waals Homojunction: Ideal p–n Diode Behavior in MoSe2" Advanced Materials 27, 5534–5540 (2015)

Tongay et. al. "Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons" Scientific Reports 3, Article number: 2657 (2013)

X Li et al. "Determining layer number of twodimensional flakes of transition-metal dichalcogenides by the Raman intensity from substrates" Nanotechnology 27 (2016) 145704

Tongay et.al. Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2; Nano Letters, 2012, 12 (11), pp 5576–5580

Manish Chhowalla, "Two-dimensional semiconductors for transistors" Nature Reviews Materials 1, Article number: 16052 (2016) doi:10.1038/natrevmats.2016.52

D. Wolverson et.al. "Raman Spectra of Monolayer, Few-Layer, and Bulk ReSe2: An Anisotropic Layered Semiconductor" ACS Nano, 2014, 8 (11), pp 11154–11164

M. Yankowitz et. al. "Intrinsic Disorder in Graphene on Transition Metal Dichalcogenide Heterostructures" Nano Letters, 2015, 15 (3), pp 1925–1929

H. C. Diaz et.al. "Molecular beam epitaxy of the van der Waals heterostructure MoTe2 on MoS2: phase, thermal, and chemical stability" 2D Materials, Volume 2, Number 4 (2015)

Product Reviews

Find Similar Products by Category