Description
1T-phase TaS2 exhibits three distinct behavior; At T<180K has Mott phase transition, nearly commensurate charge density wave (CDW) below 354K, incommensurate CDW between 350K<T<550K, and metallic / semimetallic behavior above >550K. Please refer to dataset collected from 1T-TaS2 grown at our facilities. Single crystal 1T-phase TaS₂ crystals come with guaranteed charge density wave (CDW) behavior. These crystals are grown using flux zone technique which is superior to commonly used chemical vapor transport (CVT) that produces dirty and contaminated crystals. Each growth takes close to three months to provide you perfected crystals. Each crystal is highly crystalline, perfectly oriented in 0001 direction, and is ready to to exfoliate. Importantly, 1T-TaS2 crystals are environmentally stable, and thus can be used for many years without any concern over air interaction.
Flux zone vs. CVT growth method: Contamination of halides in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly electronic grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique provides quick (~2 weeks) growth but poor crystalline quality while flux method takes ~3 months, ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as default choice. Flux zone grown crystals come with guaranteed CDW behavior whereas CVT grown crystals might not exhibit CDW. If you research needs STM grade surfaces or even STM samples (flat crystals mounted on conductive STM holders) please contact us, we will be happy to arrange these samples.
TaS2 characteristics
| Sample size | ~6-8 mm |
| Material properties | Charge density wave (CDW) material |
| Crystal structure | Hexagonal symmetry |
| Unit cell parameters | a=b=0.335 nm, c=0.593 nm; α=β=90°, γ=120° |
| Growth method | Flux zone (guaranteed no halide contamination) [Optional CVT]: Contains Br2, Cl2, TeCl4, and other halides |
| Purity | 99.9995% confirmed |
Observed CDW in 1T phase TaS2 crystals from 2Dsemiconductors
XRD data collected from 1T phase TaS2 crystals
SEM image collected from 1T phase TaS2 crystals
Additional Information
Elements: |
Ta,S |
Element: |
Tantalum |
Element: |
Sulfur |
Formula: |
TaS2 |
Material class: |
MX2 |
Material class: |
Dichalcogen |
Properties: |
Semiconductor |
Properties: |
Semimetal |
Properties: |
CDW |
Band gap range: |
VIS |
Growth method: |
Flux |
Growth method: |
CVT |
Doping: |
Undoped |
![TaS2 [2H-phase] crystals : Large size high quality 2D crystals - 2Dsemiconductors USA](https://cdn11.bigcommerce.com/s-i40qayioty/images/stencil/590x590/products/173/979/2H_phase_TaS2_crystals__08973__44251.1704062307.jpg?c=1 "TaS2 [2H-phase] crystals : Large size high quality 2D crystals - 2Dsemiconductors USA")
