Anisotropic transition metal trichalcogenide material TiS3 is available at 2Dsemiconductors USA. TiS3 is a layered material like MoS2 and other layered systems. However, the crystal displays strong crystalline anisotropy which results in direction dependent properties like thermal conductivity, electronic mobility, and excitonic binding energies. Recent studies have proposed TiS3 as high carrier mobility 2D transistors, new IR material, as well as polarized emission material. In a typical order, a large number of layered needle like sheets are contained in a capsule sealed under Argon environment.
Crystals have been characterized by TEM, XPS, SIMS, Raman, and XRD and possess perfect 1:3 stoichiometry and defect density less than 1 defects / 10,000 unit cells.