GaTe - ALD Grown Thin Films

SKU:
ALD-GATE
Condition:
New
  • GaTe thin film on sapphire
  • GaTe thin film on SiO2/Si
  • XRD data collected from GaTe
$490.00 - $590.00
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Description

Multilayer gallium telluride (GaTe) films have been synthesized through atomic layer deposition (ALD) growth to enable large single domain thin films with negligible amount of grain boundaries. GaTe thin films are directly deposited onto double side polished c-cut sapphire substrates but can be transferred onto virtually any substrate choice. GaTe films measure 100s of nanometers in thickness and particularly ideal for thin film geometry measurements such as catalysis, photovoltaics, electronic transport, and others. GaTe films come with guaranteed PL, Raman, and semiconducting response
 
Properties of GaTe thin films - 2Dsemiconductors USA
Sample size Substrate ~1cm² (GaTe area ~0.5cm²)
Material properties 1.65 eV direct semiconductor
Crystal structure Monoclinic (anisotropic) phase
Unit cell parameters a=0.416 nm, b=0.934 nm, c=1.086 nm; α=106.05°, β=90°, γ=102.8°
Growth method Atomic layer deposition (ALD)
Purity Better than 99.9999% confirmed

 

GaTe XRD datasets
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 Photoluminescence spectrum taken on GaTe sheets 
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Additional Information

Elements:
Ga,Te
Element:
Gallium
Element:
Tellurium
Formula:
GaTe
Material class:
MX
Material class:
Quasi-1D
Properties:
Semiconductor
Properties:
Luminescent
Band gap range:
IR
Growth method:
ALD
Doping:
Undoped
Thin-film type:
Multilayer
Substrate:
SiO2/Si
Substrate:
Sapphire
Substrate:
Custom
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