Cr2Ge2Te6 Crystal

SKU:
BLK-Cr2Ge2Te6-FLX
Condition:
New
  • CrGeTe3 crystal
  • CrGeTe3 crystals
  • CrGeTe3 crystals
  • CrGeTe3 crystals
$590.00
Frequently bought together:

Description

The only magnetic grade CrGeTe3 vdW crystals in the commercial market. Our customers knows that slim amount of defects and magnetic impurities are sufficient to mask the observation of exotic magnetic behavior from 2D magnets. Our vdW magnets are created using state-of-the-art techniques to provide highest magnetic quality crystals through slow but high quality self-flux technique without using any contaminating transport agents.

Cr2Ge2Te6 is a layered ferromagnetic semiconductor which is close to 2D Heisenberg ferromagnet with Curie temperature (Tc) values at 65K in bulk. It exhibits layered dependent Curie temperature, coercive fields, and magnetic properties. Our Cr2Ge2Te6 crystals are grown by flux-zone or chemical vapor transport techniques with 99.9999% confirmed purity and defect free nature. It comes with guaranteed ferromagnetic response and highest purity as well as crystallinityAll these products are handled using non-magnetic tweezers and in non-magnetic environment with tools that are free of magnetic impurities to ensure intrinsic magnetic properties can be confidently measured and probed.

Properties of Cr2Ge2Te6 vdW ferromagnetic crystals

Crystal size ~few mm in size
Material properties 2D Heisenberg ferromagnet, semiconductor
Crystal structure Hexagonal phase
Unit cell parameters a=b=6.82 A°, c=20.56 A°, α=β=90° γ=120°
Purity 99.9999% confirmed
Growth method [Default] Flux zone (no halide contamination) defect free
[Optional CVT]: Contains Br2, Cl2, TeCl4, and other halides

 

Magnetic properties of Cr2Ge2Te6 crystals

cr2ge2te6-magnetic-mpms.png

XRD data collected from Cr2Ge2Te6 crystals

cr2ge2te6-xrd.png

 

Raman spectrum of Cr2Ge2Te6 crystals

cr2ge2te6-raman.png 

View AllClose

Additional Information

Elements:
Cr,Ge,Te
Element:
Germanium
Element:
Tellurium
Formula:
Cr2Ge2Te6
Material class:
M2X3
Properties:
Semiconductor
Properties:
Magnet
Band gap range:
VIS
Growth method:
Flux
Growth method:
CVT
Doping:
Undoped
View AllClose