InTe Crystal

SKU:
BLK-InTe
Condition:
New
$590.00
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Description

The only commercially available layered InTe crystals. In the bulk form (InTe), Indium Telluride, has band-gap at around 0.6 eV and display strong photoluminescence. Similar to molybdenum disulfide, it has layered structure (lamellar) with weak interlayer coupling, enabling to isolate down to monolayers. InTe crystals exhibit TlSe-like structural transformation and thus has 2D anisotropic response much similar to ReS2, WTe2, and TiS3. Each monolayer is four atoms thick (Te-In-In-Te) that is roughly 0.9-1.0 nm. In our facilities, we have isolated InTe down to monolayer. In the literature, monolayer InTe is currently under-studied, yet to be discovered. Raman peaks are sharp and strong indicating high crystallinity.
 
Our crystals are grown by state-of-the-art growth techniques after 5 weeks and show high crystallinity. The size of the samples is typically around ~4mm in size. InTe has a layered structure with weak interlayer coupling. Single crystal InTe comes ready for exfoliation and is ideal for 2D research.
 
Properties of InTe layered crystals - 2Dsemiconductors USA
Crystal size ~4 mm in size
Material properties 2D anisotropic semiconductor ~0.7 eV direct gap
Crystal structure Monoclinic
Growth method Float zone technique
Purity 99.9999% guaranteed
Characterization XRD, XPS, AES, SIM, and HRTEM

 

 
 
 
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Additional Information

Elements:
In,Te
Element:
Indium
Element:
Tellurium
Formula:
InTe
Material class:
MX
Material class:
Quasi-1D
Properties:
Semiconductor
Properties:
High mobility
Band gap range:
IR
Growth method:
Float zone
Doping:
Undoped
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