SbAsS₃

Sb₂xAs₂(1-x)S₃ alloys are created by alloying Sb into As₂S₃.

Please specify your x value when ordering
Space group: P21/c
Layered: Yes / Exfoliates to monolayers
Band gap: ~1.7 eV in bulk
Purity: Semiconductor grade (6N) 99.9999%
Growth technique: Vapor transport technique – Duration: 2.0 months
Sample size: 5-10 mm