ZrTe2 Crystal

SKU:
BLK-ZrTe2
Condition:
New
  • ZrTe2 crystals - Large size high purity ZrTe2 layered crystals - 2Dsemiconductors USA
  • ZrTe2 crystals - Large size high purity ZrTe2 layered crystals - 2Dsemiconductors USA
  • XRD from ZrTe2 crystals - Large size high purity ZrTe2 layered crystals - 2Dsemiconductors USA
$510.00
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Description

Zirconium ditelluride is a semimetal exhibiting massless Dirac Fermions. ZrTe2 belongs to group-IV TMDCs family and adopts a stable 1T-octahedral structure. ZrTe2's electronic band structure has interesting characteristics showing crossings of valence and conduction bands, near the Fermi level suggesting topological 3D Dirac semimetal behavior [1]. Interestingly, DFT calculations have also shown opening of electronic band gap for sheets below 3-4 layers, and becomes direct gap semiconductor in monolayer form (Egap~0.3-0.5 eV). These ZrTe2 crystals were designed and optimized at our facilities starting 2014 to achieve perfect electronic grade materials with: 1) excellent stoichiometry, 2) large single domain size, 3) single phase materials without any mixed phases or amorphous content, 4) unmatched purity -electronic grade (5.8N), 99.9998% confirmed. Our crystals exhibit sharpest Raman and XRD peaks in the commercial market proving the high quality of our materials.purity. 

Properties of ZrTe2 layered crystals

Material properties Semimetal, topological material, IR semiconductor
Crystal structure 1T-octahedral
Unit cell parameters a=b=0.378 nm; c=0.682 nm; α=β=90°; γ=120°
Growth method Flux zone growth or chemical vapor transport (CVT)
Purity 6N electronic grade [Confirmed and guaranteed at 99.9999%]
Characterization XRD, TEM, quantum transport, XPS, AFM, Raman

 

Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice. 


XRD data collected from ZrTe2 crystals

zrte2-xrd.png

References
[1] ACS Nano12 (2), 1696–1703 (2018)
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Additional Information

Elements:
Zr,Te
Element:
Zirconium
Element:
Tellurium
Formula:
ZrTe2
Material class:
MX2
Material class:
Dichalcogen
Properties:
Semiconductor
Properties:
Semimetal
Band gap range:
IR
Growth method:
CVT
Growth method:
Flux
Doping:
Undoped
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