BiSbTeSe BiSbTeSe BiSbTeSe

BiSbTeSe

$540.00

Bi1.5Sb0.5Te1.7Se1.3 or in shortly BSTS is a vdW topological material and vdW superconductor with exciting superconducting properties from bulk to monolayer scales. BSTS is a 3D topological insulator and superconductor and the structural elemental composition is set at Bi1.5Sb0.5Te1.7Se1.3. This is an optimized composition of the topological insulator Bi2Te2Se (BST) in which the Te:Se ratio is reduced by replacing (substitutional) Bi with Sb atoms. In the image Bi and Sb are donated as magenta while Te and Se are yellow and green. Our BSTS crystals have been synthesized by chemical vapor transport technique at our facilities and they measure 3-5mm in size due to complexities associated with the crystal growth.

he properties of BSTS vdW crystals

Sample size ~3-5 mm in size 
Material properties Topological insulator and superconductor
Crystal structure trigonal phase
Unit cell parameters a=b=c 1.05nm α=β=γ=23.95°
Production method Chemical vapor transport 99.9995% purity
Characterization methods SIMS, XRD, EDS, Raman, quantum transport

Full Description
Formula: BiSbTeSe
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  • Description

    Bi1.5Sb0.5Te1.7Se1.3 or in shortly BSTS is a vdW topological material and vdW superconductor with exciting superconducting properties from bulk to monolayer scales. BSTS is a 3D topological insulator and superconductor and the structural elemental composition is set at Bi1.5Sb0.5Te1.7Se1.3. This is an optimized composition of the topological insulator Bi2Te2Se (BST) in which the Te:Se ratio is reduced by replacing (substitutional) Bi with Sb atoms. In the image Bi and Sb are donated as magenta while Te and Se are yellow and green. Our BSTS crystals have been synthesized by chemical vapor transport technique at our facilities and they measure 3-5mm in size due to complexities associated with the crystal growth.

    he properties of BSTS vdW crystals

    Sample size ~3-5 mm in size 
    Material properties Topological insulator and superconductor
    Crystal structure trigonal phase
    Unit cell parameters a=b=c 1.05nm α=β=γ=23.95°
    Production method Chemical vapor transport 99.9995% purity
    Characterization methods SIMS, XRD, EDS, Raman, quantum transport