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CVD GaSe

SKU: CVD-GaSe
$490.00

Chemical vapor deposited (CVD) GaSe films have been synthesized at our facilities in 2019. Bulk GaSe is a 2.0 eV direct semiconductor with exciting second harmonic, optical, and photovoltaics applications. It crystallizes in hexagonal structure. CVD GaSe samples measure nearly 1x1cm2 in size. The sample does not reach full continuity instead one can find many isolated GaSe triangles that measure 1L to 100s of layer in thickness. By default it is grown onto SiO2/Si or (100) GaAs substrates.

The characteristics of CVD GaSe

Sample size 1cm x 1cm might have uneven sample shape
Substrate type  SiO2/Si or GaAs
Coverage Isolated triangles
Electrical properties Direct gap semiconductor (bulk) indirect gap semiconductor (monolayer)
Crystal structure Hexagonal phase
Unit cell parameters a=b=0.376 nm, c=1.596 nm, α=β=90°, γ=120°
Production method Chemical vapor deposition
Characterization methods Raman, photoluminescence, TEM, EDS

 

Full Description
Formula: GaSe
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  • Description

    CVD GaSe

    Chemical vapor deposited (CVD) GaSe films have been synthesized at our facilities in 2019. Bulk GaSe is a 2.0 eV direct semiconductor with exciting second harmonic, optical, and photovoltaics applications. It crystallizes in hexagonal structure. CVD GaSe samples measure nearly 1x1cm2 in size. The sample does not reach full continuity instead one can find many isolated GaSe triangles that measure 1L to 100s of layer in thickness. By default it is grown onto SiO2/Si or (100) GaAs substrates.

    The characteristics of CVD GaSe

    Sample size 1cm x 1cm might have uneven sample shape
    Substrate type  SiO2/Si or GaAs
    Coverage Isolated triangles
    Electrical properties Direct gap semiconductor (bulk) indirect gap semiconductor (monolayer)
    Crystal structure Hexagonal phase
    Unit cell parameters a=b=0.376 nm, c=1.596 nm, α=β=90°, γ=120°
    Production method Chemical vapor deposition
    Characterization methods Raman, photoluminescence, TEM, EDS

     

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