CVD Sb2Te3

CVD Sb2Te3

$490.00

Chemical vapor deposited (CVD) Sb2Te3 films have been synthesized at our facilities in 2019. Bulk Sb2Te3 crystal is a topological insulator which crystallizes in an orthorhombic space group. CVD Sb2Te3 samples measure 1x1cm2 in size and reaches to full coverage. By default it is grown onto souble side polished sapphire, but can also be transferred to SiO2/Si substrates on demand. 

The characteristics of CVD Sb2Te3 

Sample size 1cm x 1cm square shaped
Substrate type  (0001) c-cut sapphire (Can be transferred onto any substrate)
Coverage Full coverage
Electrical properties Topological insulator (bulk form)
Crystal structure Trigonal phase
Unit cell parameters a=b=0.427 nm, c=3.052 nm, α=β=90°, γ=120°
Production method Chemical vapor deposition
Characterization methods Raman, photoluminescence, TEM, EDS

XRD taken from Sb2Te3 crystals

sb2te3-xrd-ii.png

Raman spectrum acquired from Sb2Te3 single crystals

sb2te3-raman.png

 

 

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  • Description

    Chemical vapor deposited (CVD) Sb2Te3 films have been synthesized at our facilities in 2019. Bulk Sb2Te3 crystal is a topological insulator which crystallizes in an orthorhombic space group. CVD Sb2Te3 samples measure 1x1cm2 in size and reaches to full coverage. By default it is grown onto souble side polished sapphire, but can also be transferred to SiO2/Si substrates on demand. 

    The characteristics of CVD Sb2Te3 

    Sample size 1cm x 1cm square shaped
    Substrate type  (0001) c-cut sapphire (Can be transferred onto any substrate)
    Coverage Full coverage
    Electrical properties Topological insulator (bulk form)
    Crystal structure Trigonal phase
    Unit cell parameters a=b=0.427 nm, c=3.052 nm, α=β=90°, γ=120°
    Production method Chemical vapor deposition
    Characterization methods Raman, photoluminescence, TEM, EDS

    XRD taken from Sb2Te3 crystals

    sb2te3-xrd-ii.png

    Raman spectrum acquired from Sb2Te3 single crystals

    sb2te3-raman.png