PdSe2 - Full Area Layers on c-cut Sapphire

SKU:
CVD-PdSe2-LRS-SP
Condition:
New
  • CVD PdSe2 by 2Dsemiconductors USA
  • Depiction of PdSe2 structure
  • Raman spectrum data collected from PdSe2 crystals grown by 2Dsemiconductors USA
  • XRD data collected from PdSe2 crystals grown by 2Dsemiconductors USA
$490.00
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Description

Bulk PdSe2 (palladium diselenide) has been predicted to exhibit 30 meV band gap which increases to 1.43 eV indirect gap (theoretical). It has also been shown to exhibit superconductivity below ~13K under mild hydrostatic pressures, and even semimetallic response in the bulk form. In comparison to other TMDCs, PdSe2 has an uncommon structure: Pd atoms coordinate with four Se atoms, forming a square backbone lattice. It has also been recently shown that PdSe2 monolayer immediately undergo PdSe2 to Pd2Se3 crystal transformation. Owing to vast amount of Pd atoms, PdSe2 has been theoretically and experimentally shown to be catalytically active material thoigh fundamental research  still remains at its seminal stages. The product measures near ~5mm in overall size and contains a few pieces in each order. 

Properties of CVD grown PdSe2

Material properties  CDW, superconducting, IR-VIS semiconductor, catalytic
Crystal structure Pbca
Unit cell parameters a= 0.579 nm b=0.594 nm, c = 0.859 nm, α=β=γ=90°
Growth method Flux zone growth (contamination halide free)
Purity 99.9999% confirmed

 

XRD data collected from PdSe2

pdse2-xrd.png

Raman spectrum collected from PdSe2 crystals

pdse2-raman-spectrum.png

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Additional Information

Elements:
Pd,Se
Element:
Palladium
Element:
Selenium
Formula:
PdSe2
Material class:
MX2
Material class:
Dichalcogen
Properties:
Semiconductor
Properties:
Superconductor
Properties:
Semimetal
Band gap range:
IR
Growth method:
CVD
Doping:
Undoped
Thin-film type:
Few-layer
Substrate:
Sapphire
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