Cadmium arsenide (Cd3As2) is non-layered bulk Dirac semimetal crystal. Cd3As2 is a degenerate n-type semiconductor belonging to the II-V family which exhibits high carrier mobility, low-effective mass, and a highly non-parabolic conduction band. These unique quantum properties have established Cd3As2 crystals as common ground to investigate quantum effects that are absent in other conventional material systems. Our Cd3As2 crystals are synthesized using Bridgmann growth technique using 6N purity powders in 3 months. Crystals are highly crystalline and exhibits impressive material stability in air due to no defects present in the crystal.
The properties of Cd3As2 quantum crystals
Sample size Each order contains up to 1 cm size crystal Material properties Dirac semimetal, Weyl Crystal structure I41cd space group Unit cell parameters a=1.265 nm c= 2.544 nm Production method Selective vapor growth (SVG) Other characteristics
- Environmentally stable
- 6N purity no defect present
- Single crystalline
- Hard to exfoliate (bulk quantum material)