Cd3As2 Crystal

Cd3As2 Crystal

SKU: BLK-Cd3As2
$690.00

Cadmium arsenide (Cd3As2) is non-layered bulk Dirac semimetal crystal. Cd3As2 is a degenerate n-type semiconductor belonging to the II-V family which exhibits high carrier mobility, low-effective mass, and a highly non-parabolic conduction band. These unique quantum properties have established Cd3As2 crystals as common ground to investigate quantum effects that are absent in other conventional material systems. Our Cd3As2 crystals are synthesized using Bridgmann growth technique using 6N purity powders in 3 months. Crystals are highly crystalline and exhibits impressive material stability in air due to no defects present in the crystal. 

The properties of Cd3As2 quantum crystals

Sample size Each order contains up to 1 cm size crystal
Material properties Dirac semimetal, Weyl
Crystal structure I41cd space group
Unit cell parameters a=1.265 nm c= 2.544 nm 
Production method Selective vapor growth (SVG)
Other characteristics
  • Environmentally stable
  • 6N purity no defect present
  • Single crystalline
  • Hard to exfoliate (bulk quantum material)
Full Description
Formula: Cd3As2
Qty
  • Description

    Cd3As2 Crystal

    Cadmium arsenide (Cd3As2) is non-layered bulk Dirac semimetal crystal. Cd3As2 is a degenerate n-type semiconductor belonging to the II-V family which exhibits high carrier mobility, low-effective mass, and a highly non-parabolic conduction band. These unique quantum properties have established Cd3As2 crystals as common ground to investigate quantum effects that are absent in other conventional material systems. Our Cd3As2 crystals are synthesized using Bridgmann growth technique using 6N purity powders in 3 months. Crystals are highly crystalline and exhibits impressive material stability in air due to no defects present in the crystal. 

    The properties of Cd3As2 quantum crystals

    Sample size Each order contains up to 1 cm size crystal
    Material properties Dirac semimetal, Weyl
    Crystal structure I41cd space group
    Unit cell parameters a=1.265 nm c= 2.544 nm 
    Production method Selective vapor growth (SVG)
    Other characteristics
    • Environmentally stable
    • 6N purity no defect present
    • Single crystalline
    • Hard to exfoliate (bulk quantum material)