Cr2S3 is ferrimagnetic layered semiconductor in its bulk form with Tc≈125 K. Cr2S3 crystallizes in rhombohedral R¯3 geometry and exhibit rather unique structure. Our Cr2S3 crystals are highly layered and very easy to exfoliate with similar characteristics as graphite and MoS2. These Cr2S3 crystals are grown by flux zone growth technique at 99.9999% purity. Crystals do not have any commonly found magnetic impurities such as Fe, Ni, Co thus magnetic, electronic, and optical measurements can be performed without any contribution from these magnetic contaminants.
Cr2S3 crystal properties
Sample size couple few mm sized crystals Material properties Ferrimagnetic semiconductor Crystal structure Rhombohedral phase Unit cell parameters a = b = 0.59 nm and c = 1.6 nm ; α=63.045°, β=116.955 γ=120.000° Production method Flux zone 99.9999% purity / no magnetic impurity Characterization methods SIMS, XRD, EDS, Raman