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Cr2S3 Crystal Cr2S3 Crystal Cr2S3 Crystal

Cr2S3 Crystal

SKU: BLK-Cr2S3
$560.00

Cr2S3 is ferrimagnetic layered semiconductor in its bulk form with Tc≈125 K. Cr2S3 crystallizes in rhombohedral R¯3 geometry and exhibit rather unique structure. Our Cr2S3 crystals are highly layered and very easy to exfoliate with similar characteristics as graphite and MoS2. These Cr2S3 crystals are grown by flux zone growth technique at 99.9999% purity. Crystals do not have any commonly found magnetic impurities such as Fe, Ni, Co thus magnetic, electronic, and optical measurements can be performed without any contribution from these magnetic contaminants.

Cr2S3 crystal properties 

Sample size couple few mm sized crystals
Material properties Ferrimagnetic semiconductor
Crystal structure Rhombohedral phase
Unit cell parameters a = b = 0.59 nm and c = 1.6 nm ; α=63.045°, β=116.955 γ=120.000°
Production method Flux zone 99.9999% purity / no magnetic impurity
Characterization methods SIMS, XRD, EDS, Raman
Full Description
Formula: Cr2S3
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  • Description

    Cr2S3 Crystal

    Cr2S3 is ferrimagnetic layered semiconductor in its bulk form with Tc≈125 K. Cr2S3 crystallizes in rhombohedral R¯3 geometry and exhibit rather unique structure. Our Cr2S3 crystals are highly layered and very easy to exfoliate with similar characteristics as graphite and MoS2. These Cr2S3 crystals are grown by flux zone growth technique at 99.9999% purity. Crystals do not have any commonly found magnetic impurities such as Fe, Ni, Co thus magnetic, electronic, and optical measurements can be performed without any contribution from these magnetic contaminants.

    Cr2S3 crystal properties 

    Sample size couple few mm sized crystals
    Material properties Ferrimagnetic semiconductor
    Crystal structure Rhombohedral phase
    Unit cell parameters a = b = 0.59 nm and c = 1.6 nm ; α=63.045°, β=116.955 γ=120.000°
    Production method Flux zone 99.9999% purity / no magnetic impurity
    Characterization methods SIMS, XRD, EDS, Raman

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