CrSeBr is a layered magnetic semiconductor exhibiting highly anisotropic electronic structure. It has been predicted to have a narrow band gap of 0.78 eV. Overall, CrSeBr is a member of CrXBr (X=S, Se) layered crystals and has Pmmn orthorhombic space group crystal structure (see images). Our CrSeBr vdW crystals have been synthesized at perfect 1:1:1 Cr:Se:Br stoichiometry to ensure perfect magnetic, electronic, and optical quality. Crystals have confirmed 99.9995% purity and excellent crystalline characteristics.
CrSBr are sealed under N2 environment under low pressures to ensure these crystals come to your laboratory with the highest quality without any degradation.
The properties of CrSeBr crystals
Sample size Each order contains a few mm sized crystals Material properties 2D magnet and narrow gap excitonic semiconductor Crystal structure Orthorhombic phase (Pmmn) Unit cell parameters a=0.699 nm b=0.790 nm; c=0.989 nm; α=90 β=91.01 γ=90° Production method Chemical vapor transport (99.9995% or higher purity) Other characteristics
- Environmentally stable
- No hidden CrSe. CrBr3, and other phases
- Single crystalline