Description
Ternary copper indium selenide crystallizes in CuIn7Se11 stoichiometry to form perfect van der waals (vdW) layered sheets. They are indirect gap semiconductors with high light-matter interaction strength. Because of its high photoresponsivity and wide spectral response range, layered CuIn7Se11 has been utilized in electronics, photodetectors, catalysis, and energy conversion technologies. Our materials have been synthesized using Bridgman growth technique using Cu2Se, In2Se3, and Se precursors. Each precursors are selected at 5.5N (99.9995%) purity to realize highest grade and single phase CuIn7Se11 crystals. Typical growth process takes 3-5 weeks and each synthesis method only produces ~3-4mm sized crystals.
Advantages
- Pure single phase without any InSe, In2Se3, or CuSe phase formation
- Large single domain size (single crystal)
- Bridgman grown which means no halides (I, Br, Cl, or other agents) are present in the crystal matrix.
- High purity 99.9995% or higher.
Additional Information
Elements: |
Cu,In,Se |
Element: |
Copper |
Element: |
Indium |
Element: |
Selenium |
Formula: |
CuIn7Se11 |
Properties: |
Semiconductor |
Band gap range: |
IR |
Band gap range: |
VIS |
Growth method: |
Bridgman |
Doping: |
Undoped |
