CuSi2P3 crystal CuSi2P3 crystal structure

CuSi2P3 Crystal

SKU: BLK-CuSi2P3
$540.00

Copper silicon phoshide CuSi2P3 crystals belong to the group I-IV2-V3 compounds wherein some of the common examples include CuGe2Ps and CuSi2P3. In particular, CuSi2P3 crystals exhibit layered vdW structure with easy exfoliation characteristics. Depiste their layered nature, their basic fundamental properties still remain unknown. They have been predicted to be 2D metals and semimetals when they are heated thermally or by laser or they are known to convert to SiP layered phase. More fundamental studies are absolutely needed to establish their electronic, magnetic, and optical properties.

The properties of CuSi2P3 vdW crystals

Sample size ~3-5 mm in size (couple pieces)
Material properties 2D metal and semimetal
Crystal structure monoclinic phase
Unit cell parameters a= 0.368 nm b=0.739 nm, c=1.635 nm, α=48.1°; β=55.965°, γ=60.54°
Production method Chemical vapor transport 99.9995% purity
Characterization methods SIMS, XRD, EDS, Raman

 

Full Description
Formula: CuSi2P3
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  • Description

    CuSi2P3 Crystal

    Copper silicon phoshide CuSi2P3 crystals belong to the group I-IV2-V3 compounds wherein some of the common examples include CuGe2Ps and CuSi2P3. In particular, CuSi2P3 crystals exhibit layered vdW structure with easy exfoliation characteristics. Depiste their layered nature, their basic fundamental properties still remain unknown. They have been predicted to be 2D metals and semimetals when they are heated thermally or by laser or they are known to convert to SiP layered phase. More fundamental studies are absolutely needed to establish their electronic, magnetic, and optical properties.

    The properties of CuSi2P3 vdW crystals

    Sample size ~3-5 mm in size (couple pieces)
    Material properties 2D metal and semimetal
    Crystal structure monoclinic phase
    Unit cell parameters a= 0.368 nm b=0.739 nm, c=1.635 nm, α=48.1°; β=55.965°, γ=60.54°
    Production method Chemical vapor transport 99.9995% purity
    Characterization methods SIMS, XRD, EDS, Raman