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Description
Layered Ga2O3
The properties of layered Ga2O3 crystals
Beta phase Ga2O3 is a layered ultraviolet semiconducting material with band gap ranging from 3-3.5eV. Owing to their recent discovery, their electronic, optical, and magnetic properties remain largely unexplored.
Sample size ~cm sized crystals Material properties ultraviolet semiconductor, luminescent Crystal structure Beta layered phase Degree of exfoliation Medium exfoliation characteristics Production method Flux growth Other characteristics - Guaranteed semiconducting response
- Sealed under vacuum compensated with Argon