GaGeTe crystal GaGeTe crystal

GaGeTe

$690.00

GaGeTe is a layered crystal with unique crystal structure and exciting electronic properties. Its band gap spans from 0.01 eV to 0.7 eV depending on its thickness and its band exhibits high carrier mobility. These attributes make this particular material exciting for infrared (IR) technologies as well as telecom range applications. While theoretically its properties are starting to emerge, fundamental properties of these materials are still at its infancy from an experimental perspective. Our GaGeTe crystals have been synthesized using high pressure flux techniques to yield these unique material systems.

The properties of GaGeTe layered crystals

Sample size Each order contains a number of 3-4 mm sized crystal
Material properties High mobility IR semiconductor
Crystal structure R3m trigonal phase
Degree of exfoliation medium hard to exfoliate
Production method High pressure growth
Other characteristics
  • No transport agents 
  • Low defect concentration
  • High carrier mobility
Full Description
Formula: GaGeTe
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  • Description

    GaGeTe is a layered crystal with unique crystal structure and exciting electronic properties. Its band gap spans from 0.01 eV to 0.7 eV depending on its thickness and its band exhibits high carrier mobility. These attributes make this particular material exciting for infrared (IR) technologies as well as telecom range applications. While theoretically its properties are starting to emerge, fundamental properties of these materials are still at its infancy from an experimental perspective. Our GaGeTe crystals have been synthesized using high pressure flux techniques to yield these unique material systems.

    The properties of GaGeTe layered crystals

    Sample size Each order contains a number of 3-4 mm sized crystal
    Material properties High mobility IR semiconductor
    Crystal structure R3m trigonal phase
    Degree of exfoliation medium hard to exfoliate
    Production method High pressure growth
    Other characteristics
    • No transport agents 
    • Low defect concentration
    • High carrier mobility