GaInS3 crystals by 2Dsemiconductors GaInS3 crystals by 2Dsemiconductors

GaInS3

$510.00

Gallium indium trisulfide or GaInS3 is a layered vdW semiconductor. Its electronic, magnetic, and optical properties from bulk to monolayer form still remains largely unknown. Our GaInS3 crystals have been synthesized at 5.8N purity and high single crystalline quality using flux zone growth technique. Resulting crystals are environmentally stable and are ready for exfoliation.

The properties of GaInS3 layered crystals

Sample size Each order contains a number of ~5mm sized crystal
Material properties 2D semiconductor 
Crystal structure Orthorhombic layered phase
Degree of exfoliation Easy to exfoliate
Production method Flux growth technique
Other characteristics
  • Easy to exfoliate
  • Environmentally stable
  • Single crystalline
Full Description
Formula: GaInS3
Qty
  • Description

    Gallium indium trisulfide or GaInS3 is a layered vdW semiconductor. Its electronic, magnetic, and optical properties from bulk to monolayer form still remains largely unknown. Our GaInS3 crystals have been synthesized at 5.8N purity and high single crystalline quality using flux zone growth technique. Resulting crystals are environmentally stable and are ready for exfoliation.

    The properties of GaInS3 layered crystals

    Sample size Each order contains a number of ~5mm sized crystal
    Material properties 2D semiconductor 
    Crystal structure Orthorhombic layered phase
    Degree of exfoliation Easy to exfoliate
    Production method Flux growth technique
    Other characteristics
    • Easy to exfoliate
    • Environmentally stable
    • Single crystalline