Description
GeBi2Te4 is a topological insulator material with exciting electronic and quantum properties. Our GiBi2Te4 single crystals were synthesized using a flux growth method without any use of halide (I2, Br, Cl2) or magnetic (Fe, Ni, Co) impurities present in the crystal matrix. The material growth starts with electrolytic purification of precursor materials (Bi, Ge, and Te) and flux decanting process at high temperatures. Our crystals come guaranteed environmental stability and electronic grade quality and thus is best suited for research and scientific applications. GeBi2Te4 crystallizes in R3m phase and is perfectly layered. The crystal is easy to exfoliate down to thinner pieces as shown in our product photos. Typical product size is around 5mm in size and is single crystalline in nature.
The properties of layered GeBi2Te4 crystals
| Sample size | few mm to 6mm in size (see images) |
| Material properties | Topological insulator |
| Crystal structure | R3m |
| Unit cell parameters | (a=b=c=4.1335Å and α=β=γ=17.757°) |
| Production method | Flux zone technique 6N purity. Single crystal |
| Characterization methods | SIMS, XRD, EDS, Raman |
Additional Information
Elements: |
Ge,Bi,Te |
Element: |
Germanium |
Element: |
Bismuth |
Element: |
Tellurium |
Formula: |
GeBi2Te4 |
Material class: |
M3X4 |
Material class: |
Alloy |
Properties: |
Topological |
Growth method: |
Flux |
Doping: |
Undoped |
