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GeBi2Te4 Crystal

SKU: BLK-GeBi2Te4
$590.00

GeBi2Te4 is a topological insulator material with exciting electronic and quantum properties. Our GiBi2Te4 single crystals were synthesized using a flux growth method without any use of halide (I2, Br, Cl2) or magnetic (Fe, Ni, Co) impurities present in the crystal matrix. The material growth starts with electrolytic purification of precursor materials (Bi, Ge, and Te) and flux decanting process at high temperatures. Our crystals come guaranteed environmental stability and electronic grade quality and thus is best suited for research and scientific applications. GeBi2Te4 crystallizes in R3m phase and is perfectly layered. The crystal is easy to exfoliate down to thinner pieces as shown in our product photos. Typical product size is around 5mm in size and is single crystalline in nature. 

The properties of layered GeBi2Te4 crystals

Sample size few mm to 6mm in size (see images)
Material properties Topological insulator
Crystal structure R3m
Unit cell parameters (a=b=c=4.1335Å and α=β=γ=17.757°)
Production method Flux zone technique 6N purity. Single crystal
Characterization methods SIMS, XRD, EDS, Raman
Full Description
Formula: GeBi2Te4
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  • Description

    GeBi2Te4 Crystal

    GeBi2Te4 is a topological insulator material with exciting electronic and quantum properties. Our GiBi2Te4 single crystals were synthesized using a flux growth method without any use of halide (I2, Br, Cl2) or magnetic (Fe, Ni, Co) impurities present in the crystal matrix. The material growth starts with electrolytic purification of precursor materials (Bi, Ge, and Te) and flux decanting process at high temperatures. Our crystals come guaranteed environmental stability and electronic grade quality and thus is best suited for research and scientific applications. GeBi2Te4 crystallizes in R3m phase and is perfectly layered. The crystal is easy to exfoliate down to thinner pieces as shown in our product photos. Typical product size is around 5mm in size and is single crystalline in nature. 

    The properties of layered GeBi2Te4 crystals

    Sample size few mm to 6mm in size (see images)
    Material properties Topological insulator
    Crystal structure R3m
    Unit cell parameters (a=b=c=4.1335Å and α=β=γ=17.757°)
    Production method Flux zone technique 6N purity. Single crystal
    Characterization methods SIMS, XRD, EDS, Raman

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