GeS2 Crystal

SKU:
blk-GeS2
Condition:
New
  • GeS2 vdW crystals by 2Dsemiconductors Inc.
  • GeS2 Crystal
  • SEM images collected from GeS2 crystals
$560.00
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Description

Germanium disulfide (GeS2) is a promising anisotropic semiconductor with unique vdW structure as shown in our product description. GeS2 vdW crystals were grown using chemical vapor transport technique at high pressures and temperatures over 2 months to ensure high crystallinity and vdW nature. The crystals large is size and measure ~1cm in size. The crystal itself exhibits unique layered vdW form with quasi-1D or anisotropic ribbon like structure much like in ReS2, ReSe2, or TiS3. Many of its properties are still not well established in bulk and remains unknown from few-layer to monolayers.

The characteristics of GeS2 vdW crystals 

Sample size see image above (~1cm in size)
Properties 2D semiconductor 
Crystal structure Monoclinic phase
Unit cell parameters a=6.87Å, b=12.55Å, c=16.45Å,  α=β=90° γ=91.04°
Growth technique Chemical vapor transport
Purity 99,9995% purity SIMS confirmed
Production method SEM, EDS, Raman
Environmental stability Stable

 

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Additional Information

Elements:
Ge,S
Element:
Germanium
Element:
Sulfur
Formula:
GeS2
Material class:
MX2
Properties:
Semiconductor
Band gap range:
VIS
Growth method:
CVT
Doping:
Undoped
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