Germanium disulfide (GeS2) is a promising anisotropic semiconductor with unique vdW structure as shown in our product description. GeS2 vdW crystals were grown using chemical vapor transport technique at high pressures and temperatures over 2 months to ensure high crystallinity and vdW nature. The crystals large is size and measure ~1cm in size. The crystal itself exhibits unique layered vdW form with quasi-1D or anisotropic ribbon like structure much like in ReS2, ReSe2, or TiS3. Many of its properties are still not well established in bulk and remains unknown from few-layer to monolayers.
The characteristics of GeS2 vdW crystals
Sample size see image above (~1cm in size) Properties 2D semiconductor Crystal structure Monoclinic phase Unit cell parameters
a=6.87Å, b=12.55Å, c=16.45Å, a=β=90° g=91.04°
Growth technique Chemical vapor transport Purity 99,9995% purity SIMS confirmed Production method SEM, EDS, Raman Environmental stability Stable