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GeS2 vdW crystals by 2Dsemiconductors Inc. GeS2 Crystal SEM images collected from GeS2 crystals Crystal structure of 2D anisotropic GeS2 crystals EDS collected from GeS2 crystals

GeS2 Crystal

SKU: blk-GeS2
$560.00

Germanium disulfide (GeS2) is a promising anisotropic semiconductor with unique vdW structure as shown in our product description. GeS2 vdW crystals were grown using chemical vapor transport technique at high pressures and temperatures over 2 months to ensure high crystallinity and vdW nature. The crystals large is size and measure ~1cm in size. The crystal itself exhibits unique layered vdW form with quasi-1D or anisotropic ribbon like structure much like in ReS2, ReSe2, or TiS3. Many of its properties are still not well established in bulk and remains unknown from few-layer to monolayers.

The characteristics of GeS2 vdW crystals 

Sample size see image above (~1cm in size)
Properties 2D semiconductor 
Crystal structure Monoclinic phase
Unit cell parameters

a=6.87Å, b=12.55Å, c=16.45Å,  a=β=90° g=91.04°
Growth technique Chemical vapor transport
Purity 99,9995% purity SIMS confirmed
Production method SEM, EDS, Raman
Environmental stability Stable
Full Description
Formula: GeS2
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  • Description

    GeS2 Crystal

    Germanium disulfide (GeS2) is a promising anisotropic semiconductor with unique vdW structure as shown in our product description. GeS2 vdW crystals were grown using chemical vapor transport technique at high pressures and temperatures over 2 months to ensure high crystallinity and vdW nature. The crystals large is size and measure ~1cm in size. The crystal itself exhibits unique layered vdW form with quasi-1D or anisotropic ribbon like structure much like in ReS2, ReSe2, or TiS3. Many of its properties are still not well established in bulk and remains unknown from few-layer to monolayers.

    The characteristics of GeS2 vdW crystals 

    Sample size see image above (~1cm in size)
    Properties 2D semiconductor 
    Crystal structure Monoclinic phase
    Unit cell parameters

    a=6.87Å, b=12.55Å, c=16.45Å,  a=β=90° g=91.04°
    Growth technique Chemical vapor transport
    Purity 99,9995% purity SIMS confirmed
    Production method SEM, EDS, Raman
    Environmental stability Stable

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