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InGaSe2 crystals

InGaSe2

SKU: Blk-InGaSe2
$690.00

InGaSe2 is a new infrared (IR) grade semiconductor with vdW layered structure. Theoretical studies suggest narrow (0.5 eV) bandgap value while the experimental investigations still remain limited to date. Our InGaSe2 vdW crystals were synthesized using chemical vapor transport technique (CVT) at 99.999% or higher purity values. The materials are highly crystallized and exhibit high optical and electronic performance. Typical crystals measure 4-6mm in size. 

The properties of InGaSe2 vdW crystals 

Sample size Nearly 0.5cm in size or a few pieces adding to cm 
Material properties IR semiconductors
Crystal structure Tetragonal vdW I4/mcm structure
Degree of exfoliation Easy to exfoliate
Production method Multi-step Bridgman and oxygen compensation process
Other characteristics
  • Electronic and optical grade
  • Excellent stability in air 
  • High crystallinity
Full Description
Formula: InGaSe2
Qty
  • Description

    InGaSe2

    InGaSe2 is a new infrared (IR) grade semiconductor with vdW layered structure. Theoretical studies suggest narrow (0.5 eV) bandgap value while the experimental investigations still remain limited to date. Our InGaSe2 vdW crystals were synthesized using chemical vapor transport technique (CVT) at 99.999% or higher purity values. The materials are highly crystallized and exhibit high optical and electronic performance. Typical crystals measure 4-6mm in size. 

    The properties of InGaSe2 vdW crystals 

    Sample size Nearly 0.5cm in size or a few pieces adding to cm 
    Material properties IR semiconductors
    Crystal structure Tetragonal vdW I4/mcm structure
    Degree of exfoliation Easy to exfoliate
    Production method Multi-step Bridgman and oxygen compensation process
    Other characteristics
    • Electronic and optical grade
    • Excellent stability in air 
    • High crystallinity

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