Nb2SiTe4 crystals Nb2SiTe4 Nb2SiTe4 crystals

Nb2SiTe4

$590.00

Nb2SiTe4 is a layered narrow gap semiconductor. It crystallizes in monoclinic phase (P121/c1) wherein Nb and Si cations are sandwiched between Te anion atoms forming the individual layers. Nb2SiTe4 crystals are all perfectly layered and easy to exfoliate much similar to MoS2 and Bi2Te3 crystals. Overall it exhibits 0.4 eV optical band gap which has important applications towards mind-infrared and infrared technologies. Our Nb2SiTe4 crystals have been synthesized through chemical vapor transport (CVT) technique at high purity limits (99.9995% or higher) to ensure crystals are environmentally stable and optical/electronic grade. Each order comes with couple mm sized crystals as shown in the product images.

The properties of Nb2SiTe4 vdW crystals

Sample size couple few mm sized crystals
Material properties Narrow gap semiconductor
Crystal structure monoclinic phase
Unit cell parameters a=0.63 nm b=0.69 nm c= 1.47 nm α=90° β=107° γ=90°
Production method Chemical vapor transport 99.9995% purity
Characterization methods SIMS, XRD, EDS, Raman

Full Description
Formula: Nb2SiTe4
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  • Description

    Nb2SiTe4 is a layered narrow gap semiconductor. It crystallizes in monoclinic phase (P121/c1) wherein Nb and Si cations are sandwiched between Te anion atoms forming the individual layers. Nb2SiTe4 crystals are all perfectly layered and easy to exfoliate much similar to MoS2 and Bi2Te3 crystals. Overall it exhibits 0.4 eV optical band gap which has important applications towards mind-infrared and infrared technologies. Our Nb2SiTe4 crystals have been synthesized through chemical vapor transport (CVT) technique at high purity limits (99.9995% or higher) to ensure crystals are environmentally stable and optical/electronic grade. Each order comes with couple mm sized crystals as shown in the product images.

    The properties of Nb2SiTe4 vdW crystals

    Sample size couple few mm sized crystals
    Material properties Narrow gap semiconductor
    Crystal structure monoclinic phase
    Unit cell parameters a=0.63 nm b=0.69 nm c= 1.47 nm α=90° β=107° γ=90°
    Production method Chemical vapor transport 99.9995% purity
    Characterization methods SIMS, XRD, EDS, Raman