PbTe crystallizes in the NaCl crystal structure with Pb atoms occupying the cation and Te forming the anionic lattice. It is a narrow gap semiconductor with a band gap of 0.32 eV. PbTe crystals are single crystalline grown by Bridgman technique to ensure high structural quality and thermoelectric and electronic performance.
The properties of PbTe crystals
Sample size Each order contains one a few mm sized PbTe crystal Material properties Thermoelectric, metallic Crystal structure NaCl structure Degree of exfoliation No exfoliation Production method High thermoelectric purity (6N or better) through Bridgman growth Other characteristics
- thermoelectric grade
- Moderate stability in air (glovebox recommended)
- Low defect concentration
- High thermoelectric quality