PdBi2 layered crystals PdBi2 layered crystals

PdBi2

$680.00

PdBi2 is a layered superconductor with topologically protected surface states in a centrosymmetric layered β-PdBi2 phase. It exhibits centrosymmetric tetragonal crystal structure belonging to the space group I4/mmm. Each Pd atoms is located at the center of the square prism of eight Bi atoms as displayed in our product photos. Our PdBi2 crystals are synthesized through self flux technique at 99.9999% purity over extended amount of time to achieve perfectly layered PdBi2 crystals. Each product measures 3-4 mm in size and all the crystals are ready for exfoliation with perfect exfoliation characteristics.

The properties of PdBi2 layered crystals

Sample size Each order contains a number of 3-4 mm sized crystal
Material properties Topological and superconductor 
Crystal structure Beta phase  I4/mmm
Degree of exfoliation easy to exfoliate
Production method Self flux technique
Other characteristics
  • No transport agents 
  • Low defect concentration
  • High carrier mobility
Full Description
Formula: PdBi2
Qty
  • Description

    PdBi2 is a layered superconductor with topologically protected surface states in a centrosymmetric layered β-PdBi2 phase. It exhibits centrosymmetric tetragonal crystal structure belonging to the space group I4/mmm. Each Pd atoms is located at the center of the square prism of eight Bi atoms as displayed in our product photos. Our PdBi2 crystals are synthesized through self flux technique at 99.9999% purity over extended amount of time to achieve perfectly layered PdBi2 crystals. Each product measures 3-4 mm in size and all the crystals are ready for exfoliation with perfect exfoliation characteristics.

    The properties of PdBi2 layered crystals

    Sample size Each order contains a number of 3-4 mm sized crystal
    Material properties Topological and superconductor 
    Crystal structure Beta phase  I4/mmm
    Degree of exfoliation easy to exfoliate
    Production method Self flux technique
    Other characteristics
    • No transport agents 
    • Low defect concentration
    • High carrier mobility