ReS2 Solution

SKU:
SOL-ReS2-IS
Condition:
New
  • ReS2 solution
  • ReS2 solution
$410.00
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Description

This product contains ReS2 flakes solution in ethanol media. Other solutions are also available please drop a note during the checkout process about your desired solution. The ReS2 solution has been developed by pulsed ultrasonic treatment of high quality ReS2 crystals synthesized through flux zone technique to achieve high quality ReS2 sheets dispersed in solution. The crystallinity of ReS2 flakes has been confirmed through electron energy dispersive spectroscopy (EDAX), Raman spectroscopy (FWHM<5 cm-1), and scanning electron microscopy (SEM) measurements. Lateral sizes of ReS2 flakes deposited onto different substrates range from ~25nm to ~10 micrometers while thickness range from 1L to few and multilayers.

Note on volume, concentration, and solvent type: International shipping mostly allows only small volume shipping, thus we ship supersaturated 2D solutions (~100-300 mg/L depending on the type of 2D layers). These supersaturated solutions are designed specifically so that you can dilute to produce large volume (250-500mL) solutions. In our product, ethanol is used (and recommended) as the dispersant solvent owing to its environmental stability, thermal stability, dispersant properties, and non-contaminating nature. However, if your research needs other solvents, either contact us or drop a note during the check out process regarding your desired solution type. 

The properties of ReS2 crystals used in 2D ReS2 solution 

Crystal size 5-7mm in size
Dopants
Intrinsic semiconductor (for doping please contact us)
Material properties ~1.4-1.5 eV emission (300k), direct/indirect gap semiconductor
Crystal structure 1T´ phase (anisotropic semiconductor)
Unit cell parameters a=0.633 nm, b=0.638 nm, c=0.665 nm; α=106.7°, β=119°, γ=89.98°
Growth method [Default] Flux zone (no halide contamination) defect free
[Optional CVT]: Contains Br2, Cl2, TeCl4, and other halides
Purity 99.9999% confirmed

Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice. 

XRD data collected from ReS2 crystals

res2-xrd-ii.png

Raman spectrum collected from ReS2 monolayers

res2-raman-spectrum-combined.png

PL spectrum collected from ReS2 on SiO2/Si substrates

res2-crystals-pl-spectrum.png

SIMS purity datasets collected from ReS2 crystals

res2-sims-purity.png

 HRTEM images collected from ReS2 crystals

 res2-hrtem.png

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Additional Information

Elements:
Re,S
Element:
Rhenium
Element:
Sulfur
Formula:
ReS2
Material class:
MX2
Material class:
Dichalcogen
Material class:
Quasi-1D
Properties:
Semiconductor
Properties:
Excitonic
Band gap range:
VIS
Growth method:
Solution Phase
Doping:
Undoped
Solution Type:
Isopropanol
Solution Type:
Ethanol
Solution Type:
DI Water
Solution Type:
NMP
Solution Type:
Custom
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