Description
Antimony selenide (SbSe) is a layered thermoelectric and narrow gap semiconductor. While its bulk properties are established, their performance and properties from few to monolayer limit remains largely unknown. Our SbSe crystals have been synthesized at 6N purity and high single crystalline quality using Bridgman technique. Resulting crystals are environmentally stable and ready for exfoliation.
The properties of SnSe layered crystals
| Sample size | Each order contains a number of ~5mm sized crystal |
| Material properties | Layered thermoelectric and narrow gap semiconductor |
| Crystal structure | Pnma layered phase |
| Degree of exfoliation | Easy to exfoliate |
| Production method | Bridgman growth technique |
| Other characteristics |
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Additional Information
Elements: |
Sb,Se |
Element: |
Antimony |
Element: |
Selenium |
Formula: |
SbSe |
Material class: |
MX |
Properties: |
Semiconductor |
Band gap range: |
IR |
Band gap range: |
VIS |
Growth method: |
Bridgman |
Doping: |
Undoped |
