SbTe crystals SbTe crystals

SbTe Crystal

SKU: BLK-SbTe
$540.00

SbTe antimony telluride is a layered phase change material with exciting optical driven phase change properties. This vdW crystal exhibit rather unique crystalline properties (see atomic view images). While some preliminary studies have been conducted to date, it is quantum properties especially in the size confinement limit is largely unknown.

Our SbTe vdW crystals are synthesized using modified Bridgman technique using our own process parameters at unparalleled 99.9999% confirmed purity rates. Crystals are cut in c-axis, thus it is very easy to exfoliate onto desired substrates. Each order comes with large nearly centimeter size crystals. 

Summary of SbTe vdW crystals

Sample size Centimeter size ready to exfoliate
Material properties Phase change, 2D metal, 2D semimetal
Crystal structure Trigonal phase
Unit cell parameters a=b=0.432 nm, c=2.449 nm, α=β=90°, γ=120°
Production method Modified Bridgman
Characterization methods Raman, EDS, SIMS

 

Full Description
Formula: SbTe
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  • Description

    SbTe Crystal

    SbTe antimony telluride is a layered phase change material with exciting optical driven phase change properties. This vdW crystal exhibit rather unique crystalline properties (see atomic view images). While some preliminary studies have been conducted to date, it is quantum properties especially in the size confinement limit is largely unknown.

    Our SbTe vdW crystals are synthesized using modified Bridgman technique using our own process parameters at unparalleled 99.9999% confirmed purity rates. Crystals are cut in c-axis, thus it is very easy to exfoliate onto desired substrates. Each order comes with large nearly centimeter size crystals. 

    Summary of SbTe vdW crystals

    Sample size Centimeter size ready to exfoliate
    Material properties Phase change, 2D metal, 2D semimetal
    Crystal structure Trigonal phase
    Unit cell parameters a=b=0.432 nm, c=2.449 nm, α=β=90°, γ=120°
    Production method Modified Bridgman
    Characterization methods Raman, EDS, SIMS