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Description
SnBi4Te7
SnBi4Te7 is a layered van der Waals topological insulator and narrow gap semiconductor with easy exfoliation characteristics. It belong to the trigonal crystal system with alternating Sn-Bi-Te layers to make up SnBi4Te7 stoichiometry. SnBi4Te7 crystals are grown using Bridgman growth technique and come with guaranteed easy exfoliation characteristics, 6N or higher purity, and excellent electronic performance
The physical properties of SnBi4Te7
Sample size centimeter sized crystals Properties Topological Insulator
Narrow gap semiconductor (0.65 eV) [Calculated]
Very easy to exfoliate
Unit cell parameters a=b=0.439 nm and c=2.398 nm Production method Bridgman growth technique
