ZrGeTe4 crystal is a layered anisotropic semiconductor with the predicted bandgap of 0.4 eV. While it is layered and can be exfoliated down to few- and monolayers, their properties remain largely unknown. Our ZrGeTe4 vdW crystals are synthesized using flux zone growth technique at unparalleled 99.9999% confirmed purity rates. Crystals are cut in c-axis and thus are ready to exfoliate onto desired substrates.
Summary of ZrGeTe4 vdW crystals
Sample size ~4-5mm in size Material properties 2D anisotropic IR semiconductor Crystal structure Tetragonal phase Unit cell parameters a=b=0.382 nm, c=0.911 nm, α=β=90°, γ=120° Production method Flux zone Characterization methods SIMS, XRD, EDS