ZrGeTe4 crystals ZrGeTe4 SEM image ZrGeTe4 atomic structure

ZrGeTe4

$590.00

ZrGeTe4 crystal is a layered anisotropic semiconductor with the predicted bandgap of 0.4 eV. While it is layered and can be exfoliated down to few- and monolayers, their properties remain largely unknown. Our ZrGeTe4 vdW crystals are synthesized using flux zone growth technique at unparalleled 99.9999% confirmed purity rates. Crystals are cut in c-axis and thus are ready to exfoliate onto desired substrates. 

Summary of ZrGeTe4 vdW crystals

Sample size ~4-5mm in size
Material properties 2D anisotropic IR semiconductor
Crystal structure Tetragonal phase
Unit cell parameters a=b=0.382 nm, c=0.911 nm, α=β=90°, γ=120°
Production method Flux zone
Characterization methods SIMS, XRD, EDS

 

Full Description
Formula: ZrGeTe4
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  • Description

    ZrGeTe4 crystal is a layered anisotropic semiconductor with the predicted bandgap of 0.4 eV. While it is layered and can be exfoliated down to few- and monolayers, their properties remain largely unknown. Our ZrGeTe4 vdW crystals are synthesized using flux zone growth technique at unparalleled 99.9999% confirmed purity rates. Crystals are cut in c-axis and thus are ready to exfoliate onto desired substrates. 

    Summary of ZrGeTe4 vdW crystals

    Sample size ~4-5mm in size
    Material properties 2D anisotropic IR semiconductor
    Crystal structure Tetragonal phase
    Unit cell parameters a=b=0.382 nm, c=0.911 nm, α=β=90°, γ=120°
    Production method Flux zone
    Characterization methods SIMS, XRD, EDS