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Graphitic carbon nitride (g-C3N4) has been one of the most attractive materials in the field owing to its unique electronic structure. It exhibits 2.7 eV and ideal band alignment to oxidization and reduction energy levels for hydrogen evolution reactions...

Graphene fluoride has been developed our facilities. Carbon to Fluoride ratio is 1:1 and the particle size ranges from 1-15 microns. Electrical resistivity is 1E11-1E12 Ohm.cm. This product is ideal for battery, lubrication, thermal management, and 2D...

Semiconductor analog of graphene: Graphene oxide has been synthesized at our R&D facilities using modified reaction Hummer technique. Growth technique emphasizes on minimizing the defect density to yield optically active material and increasing the...

Semiconductor analog of graphene: Graphene oxide has been synthesized at our R&D facilities using modified reaction Hummer technique in water dispersant solution. Growth technique emphasizes on minimizing the defect density to yield optically active...