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CuIn2Se6 belongs to the family of chalcopyrite semiconductors. This new compound has attracted interest the development of thin-film solar cells and other optoelectronic devices. CuIn2Se6 exhibits properties that make it suitable for photovoltaic...

Ternary copper indium selenide crystallizes in CuIn7Se11 stoichiometry to form perfect van der waals (vdW) layered sheets. They are indirect gap semiconductors with high light-matter interaction strength. Because of its high photoresponsivity...

Worlds largest size crystals: CuInP2S6 is characterized as a ferroelectric semiconductor with two-dimensional properties, exhibiting a Curie temperature of approximately 315 Kelvin. The interlayer bonding is facilitated through van der Waals...

CuS is a member of metal chalcogenides (see our GaSe and GaTe products). It has a layered structure (lamellar) with weak interlayer coupling. In the bulk form, it is a direct band gap semiconductor with 1.6 eV band gap. Experimentally, monolayers are yet...

Monolayer flakes have been exfoliated from bulk crystals onto 90nm thermal oxide and measures from 5 micron up to 40 micron in size. Each sample contains at least one single-layer and is easy to find with the given x and y coordinates. Optical images and...

The only commercially available FeCl2 vdW 2D magnet crystals with excellent environmental stability and exfoliation characteristics. FeCl2 is a layered 2D trigonal lattice magnetic system. It exhibit unique magnetic ordering in from 2D limit to...

2D magnet FeI2 by 2Dsemiconductors. FeI2 is a metal halide compound composed of iron and iodine that has a layered crystal structure with weak interlayer interactions held together by van der Waals forces. This magnetic material exhibits...

The only magnetic grade FePS3 vdW crystals in the commercial market. Our customers knows that slim amount of defects and magnetic impurities are sufficient to mask the observation of exotic magnetic behavior from 2D magnets. Our vdW magnets are created...

FePSe3 is a layered van der Waals (vdW) crystal, and it has been predicted to have an Ising-type antiferromagnetic ordering from bulk to the monolayer limit. FePSe3 is a semiconductor with an optical band gap of 1.3 eV in the bulk limit, while its...

Graphitic carbon nitride (g-C3N4) has been one of the most attractive materials in the field owing to its unique electronic structure. It exhibits 2.7 eV and ideal band alignment to oxidization and reduction energy levels for hydrogen evolution reactions...

The properties of layered Ga2O3 crystals Beta phase Ga2O3 is a layered ultraviolet semiconducting material with band gap ranging from 4.6-4.9eV. Owing to their recent discovery, their electronic, optical, and magnetic properties remain largely unexplored...

GaGeTe is a layered crystal with unique crystal structure and exciting electronic properties. Its band gap spans from 0.01 eV to 0.7 eV depending on its thickness and its band exhibits high carrier mobility. These attributes make this particular material...