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2 inch full area coverage MoS2, MoSe2, WS2, WSe2 monolayers (few-layers are available on request) on 2 inch size c-cut sapphire substrates. CVD TMDs are all highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness...

CVD diamond is a quantum material and is much investigated in the field owing to their potential applications in biological, electronic, and quantum technologies. In particular, nitrogen-vacancy center (N-V center) is one of most celebrated point...

CVD diamond is a quantum material and is much investigated in the field owing to their potential applications in biological, electronic, and quantum technologies. In particular, nitrogen-vacancy center (N-V center) is one of most celebrated point...

Chemical vapor deposited (CVD) GaSe films have been synthesized at our facilities in 2019. Bulk GaSe is a 2.0 eV direct semiconductor with exciting second harmonic, optical, and photovoltaics applications. It crystallizes in hexagonal structure. CVD...

CVD Graphene sheets have been deposited onto 50 micron thick Cu foils using modified chemical vapor technique only on the top surface of the Cu foils. In our method, we have paid close attention to engineering defect density and single domain sizes...

Monolayer graphene transferred on SiO2/Si substrates. Full area graphene monolayers were synthesized first using our established CVD growth method (see below) on copper foils and transferred from copper onto SiO2/Si using copper etchant and polymer...

The 3D Graphene Foam is deposited comformably onto Nickel foam foils by chemical vapor deposition (CVD) process. Nickel (Ni) foams were created by acid reaction at high temperatures, followed by 4-step CVD graphene growth process. Overall, few-layers and...

Monolayer graphene and hBN transferred on SiO2/Si substrates. Full area graphene and hBN layers were synthesized first using our established CVD growth method (see below) on copper foils and transferred from copper onto SiO2/Si using copper etchant and...

h-BN (Boron Nitride) monolayer, few-layer or multilayer film is grown onto 50 um thick copper foils only on the top surface of the Cu foils. h-BN is an insulator with a direct band gap of 6 eV with strong ionic bonding between B-N atoms. Our h-BN...

Monolayer, Few-layer or multilayer hBN transferred on SiO2/Si substrates. Full area hBN layers were synthesized first using our established CVD growth method on copper foils and transferred from copper onto SiO2/Si using copper etchant and polymer...

Highly oriented pyrolytic graphite is a semimetal in the bulk form and is a zero-gap semiconductor with metallic like properties when thinned down. Often times graphite also referred as semi-metallic since its conduction and valance bands overlap each...

This product contains full area coverage MoS2 few-layers that measure ~5 layers in thickness. Sheets are grown through chemical vapor deposition technique onto c-cut double side polished sapphire substrates, but layers can be transferred onto other...