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We transfer any CVD grown monolayers onto your substrates of choice! Our R&D has developed scalable methods to transfer large area h-BN, graphene, MoS2, MoSe2, WS2, WSe2, ReS2, ReSe2, SnS2, SnSe2, PtS2, and PtSe2 sheets onto almost any...

This product contains full area coverage MoS2 few-layers that measure ~5 layers in thickness. Sheets are grown through chemical vapor deposition technique onto c-cut double side polished sapphire substrates, but layers can be transferred onto other...

This product contains full area coverage MoS2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick MoS2 sheet. Synthesized full area coverage monolayer MoS2 is...

World's first molecular beam epitaxy (MBE) grown MoS2 monolayers. MBE is an epitaxial method for single-crystal quality film deposition which offers high crystallinity and reduced defect density compared to chemical vapor deposition (CVD) or...

Isolated monolayer thickness MoS2 are grown onto c-cut (0001) sapphire substrates.  This particular product contains monolayer thickness MoS2 triangular flakes randomly distributed across sapphire substrate. While some regions reach...

This product contains full area coverage MoSe2 few-layers that measure ~5 layers in thickness. Sheets are grown through chemical vapor deposition technique onto c-cut double side polished sapphire substrates, but layers can be transferred onto other...

This product contains MoSe2 monolayers on c-cut sapphire substrates. Please note that these MoSe2 monolayers do not reach full area coverage on sapphire or SiO2/Si samples. Sample size measures 1cm in size and the entire sample surface contains...

World's first molecular beam epitaxy (MBE) grown MoSe2 monolayers. MBE is an epitaxial method for single-crystal quality film deposition which offers high crystallinity and reduced defect density compared to chemical vapor deposition (CVD) or...

2H semiconducting phase few-layer MoTe2 (3-6 layers) has been grown on 1cm2 size c-cut sapphire substrates using low-pressure chemical vapor deposition technique (LPCVD). Grown sheets can also be transferred onto other substrates such as quartz, SiO2/Si,...

This product contains full area coverage NbS2 few-layers on double side polished c-cut sapphire substrates. The sample size measures ~1cm and the entire sample surface contains few-layer thick (~2-3nm) highly crystalline NbS2 layers, though the...

PdS2 is vdW material with excellent catalytic and semiconducting properties. Full area coverage PdS2 layers on c-cut sapphire substrates has been grown using modified chemical vapor deposition technique. Sample size measures 1cm in size and the...

Bulk PdSe2 (palladium diselenide) has been predicted to exhibit 30 meV band gap which increases to 1.43 eV indirect gap (theoretical). It has also been shown to exhibit superconductivity below ~13K under mild hydrostatic pressures, and even semimetallic...