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Bi2O2Se belongs to M2X3 bismuth chalcogen tetradymite family of layered materials. It has been found to be a promising high thermal velocity ballistic semiconductor replacing silicon. Our Bi2O2Se crystals have been synthesized at high temperature...

Bi2O2Se is a new high mobility IR semiconductor with layered structure. It has proven to be a promising high thermal velocity ballistic semiconductor, serving as a potential replacement for silicon. Our Bi2O2Se solutions are meticulously...

Bi2O2Te is a vdW layered material belonging to Bismuth oxychalcogenide material systems. It crystallizes in I4/mmm which is commonly known as anti-ThCr2Si2 structure.  The crystal structure of Bi2O2Te consists of [Bi2O2]2+ layers and Te2-...

BSCCO (Bismuth strontium calcium copper oxide) is a high-temperature layered superconductor. It has the generalized chemical formula Bi2Sr2Can−1CunO2n+4+x, and n=2 which is also known as Bi-2212 with critical temperature (Tc) at ~90-95K. It is...

The first and only commercially available Ca(OH)₂ crystals were grown using float zone synthesis technique to yield perfectly layered, large size, highly crystalline vdW layered crystals. Ca(OH)2 crystals exhibit ~4 eV direct gap and is considered 2D...

CrOCl Crystals by 2Dsemiconductors CrOCl is a van der Waals layered material with unique 2D ferromagnetic properties persisting at room temperature. This remarkable feature makes CrOCl a prime candidate for spintronic devices, quantum materials research,...

The properties of layered Ga2O3 crystals Beta phase Ga2O3 is a layered ultraviolet semiconducting material with band gap ranging from 4.6-4.9eV. Owing to their recent discovery, their electronic, optical, and magnetic properties remain largely unexplored...

The first and only commercially available Mg(OH)2 crystals were grown using float zone synthesis technique to yield perfectly layered, large size, highly crystalline vdW layered crystals. Mg(OH)2 crystals exhibit ~4 eV direct gap and is considered 2D...

Manganese dioxide (MnO2) is a 2D ferromagnetic [1], catalytic [2] , and semiconducting material. It is layered and as easy to exfoliate as MoS2 or graphite. In the bulk form, MnO2 has 1.5 eV predicted band gap while it has been anticipated to increase to...

MnO2 is 2D catalytic and electronic grade semiconducting 2D material. In the bulk form, MnO2 has 1.5 eV predicted band gap while it has been anticipated to increase to 2.0 eV in the monolayer form. Starting from single crystalline MnO2, our R&D team...

MoO2.5Cl0.5 is Cl doped alpha-MoO3 crystal synthesized through chemical vapor transport (CVT) technique using Mo, MoCl5, and MoO3 precursors at high temperatures and high pressures to realize highly anisotropic ternary alloy based on MoO3 crystals. 

World's largest size highest quality MoO3 crystals a-MoO3 is a layered vdW semiconductor with a crystal structure that belongs to the space group Pbnm 62 (see unit cell parameters below). It is layered and as easy to exfoliate as MoS2 or graphite. In its...