Description
Bi2O2Se belongs to M2X3 bismuth chalcogen tetradymite family of layered materials. It has been found to be a promising high thermal velocity ballistic semiconductor replacing silicon. Our Bi2O2Se crystals have been synthesized at high temperature and low pressures at perfect structural crystallinity and physical superiority. Our Bi2O2Se crystals are guaranteed to be electronic, thermal, and optical quality and exhibit high environmental stability.
Properties of Bi2O2Se single crystals
| Sample size | a few mm sized crystals (multiple pieces) |
| Material properties | High mobility semiconductor |
| Crystal structure | Layered phase |
| Degree of exfoliation | Easy exfoliation characteristics |
| Production method | Flux growth |
| Other characteristics |
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XRD collected from Bi2O2Se single crystals by 2Dsemiconductors USA
Raman spectrum of Bi2O2Se single crystals by 2Dsemiconductors USA
Additional Information
Elements: |
Bi,O,Se |
Element: |
Bismuth |
Element: |
Oxygen |
Element: |
Selenium |
Formula: |
Bi2O2Se |
Material class: |
M2X3 |
Material class: |
Oxide |
Properties: |
Semiconductor |
Properties: |
High mobility |
Band gap range: |
IR |
Growth method: |
Flux |
Doping: |
Undoped |
