Description
Bi2SeTe2 is a topological insulator vdW layered crystal. It has the same crystal structure as Bi2Se3 and Bi2Te3, it only differs in that Se and Te atoms are alloyed to retain impressive topological insulator state rivaling to Bi2Te3. Bi2SeTe3 crystal composition can be written as Bi2Se3(x)Te3(1-x) where x=1/3. Bi2SeTe2 crystals have been synthesized using three (3) different methods, chemical vapor transport (CVT), flux zone growth, and Bridgman technique. Owing to its high crystallinity and high purity we strongly recommend flux zone or Bridgman growth methods as a synthesis choice. Our crystals measure world record <1cm in lateral sizes, they are perfectly oriented along 0001 direction, and are ready for exfoliation. Crystals are stable in air thus no special storage advised.
The combined sizes of these crystals exceed 1cm. Each order contains multiple crystals ~5-8 mm adding to well above cm scales
The properties of Bi2SeTe2 topological insulator crystals by 2Dsemiconductors
| Crystal size | ~1 cm |
| Material properties | Topological insulator, semiconductor (doping available on request) |
| Crystal structure | Rhombohedral phase |
| Unit cell parameters | a=b=0.422 nm, c=2.954 nm; α=β=90° γ=120° |
| Growth method | Bridgman growth technique (CVT or flux grown crystals also available) |
| Purity | 6N electronic grade [Confirmed and guaranteed at 99.9999%] |
Raman spectrum of Bi2SeTe2 crystals
Additional Information
Elements: |
Bi,Se,Te |
Element: |
Bismuth |
Element: |
Selenium |
Element: |
Tellurium |
Formula: |
Bi2SeTe2 |
Material class: |
M2X3 |
Material class: |
Alloy |
Properties: |
Semiconductor |
Properties: |
Topological |
Band gap range: |
IR |
Growth method: |
Bridgman |
Growth method: |
Flux |
Growth method: |
CVT |
Doping: |
Undoped |
