Black arsenic crystals Black arsenic crystals Raman spectrum collected from Black arsenic crystals Properties of Black arsenic crystals XRD data collected from Black arsenic crystals

Black Arsenic

$540.00

Black arsenic is a layered semiconductor with extreme in-plane anisotropy. Similar to its cousin black phosphorus, it exhibits high electronic mobility, thermal conductivity, and anistropic excitons along or across the arsenic chain direction. Black arsenic has puckered layered structure much similar black phosphorus. Our black arsenic crystals has been synthesized through vapor transport technique using phosphine (PH3) as a transport agent. Sheets are well layered, easy to exfoliate, and well-crystallized. Our Raman and XRD peaks show sharp and discrete peaks related to black arsenic sheets. Please note that black arsenic growth is very time extensive process, typical yield is very small. As a result, each growth only produces mm sized flakes. 

Properties of black arsenic

Sample size Few mm sized crystal
Properties 0.3 eV infrared anisotropic semiconductor
Unit cell parameters a=0.369 nm b=1.098 nm, c=0.441 nm
Production method Chemical vapor transport

 

Raman spectrum of black arsenic crystals

barsenic-raman.png

 

XRD pattern collected from black arsenic crystals

barsenic-xrd-ii.png

 

Please note that secondary black phosphorus or black arsenic phosphorus phases are anticipated in small amounts. Coexistence of these phases are normal and anticipated.

Literature

Y. Chen et.al. Black Arsenic: A Layered Semiconductor with Extreme In‐Plane Anisotropy;  Advanced Materials 2018; https://onlinelibrary.wiley.com/doi/full/10.1002/adma.201800754

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  • Description

    Black arsenic is a layered semiconductor with extreme in-plane anisotropy. Similar to its cousin black phosphorus, it exhibits high electronic mobility, thermal conductivity, and anistropic excitons along or across the arsenic chain direction. Black arsenic has puckered layered structure much similar black phosphorus. Our black arsenic crystals has been synthesized through vapor transport technique using phosphine (PH3) as a transport agent. Sheets are well layered, easy to exfoliate, and well-crystallized. Our Raman and XRD peaks show sharp and discrete peaks related to black arsenic sheets. Please note that black arsenic growth is very time extensive process, typical yield is very small. As a result, each growth only produces mm sized flakes. 

    Properties of black arsenic

    Sample size Few mm sized crystal
    Properties 0.3 eV infrared anisotropic semiconductor
    Unit cell parameters a=0.369 nm b=1.098 nm, c=0.441 nm
    Production method Chemical vapor transport

     

    Raman spectrum of black arsenic crystals

    barsenic-raman.png

     

    XRD pattern collected from black arsenic crystals

    barsenic-xrd-ii.png

     

    Please note that secondary black phosphorus or black arsenic phosphorus phases are anticipated in small amounts. Coexistence of these phases are normal and anticipated.

    Literature

    Y. Chen et.al. Black Arsenic: A Layered Semiconductor with Extreme In‐Plane Anisotropy;  Advanced Materials 2018; https://onlinelibrary.wiley.com/doi/full/10.1002/adma.201800754