Black arsenic is a layered semiconductor with extreme in-plane anisotropy. Similar to its cousin black phosphorus, it exhibits high electronic mobility, thermal conductivity, and anistropic excitons along or across the arsenic chain direction. Black arsenic has puckered layered structure much similar black phosphorus. Our black arsenic crystals has been synthesized through vapor transport technique using phosphine (PH3) as a transport agent. Sheets are well layered, easy to exfoliate, and well-crystallized. Our Raman and XRD peaks show sharp and discrete peaks related to black arsenic sheets. Please note that black arsenic growth is very time extensive process, typical yield is very small. As a result, each growth only produces mm sized flakes.
Properties of black arsenic
Sample size Few mm sized crystal Properties 0.3 eV infrared anisotropic semiconductor Unit cell parameters a=0.369 nm b=1.098 nm, c=0.441 nm Production method Chemical vapor transport
Raman spectrum of black arsenic crystals
XRD pattern collected from black arsenic crystals
Please note that secondary black phosphorus or black arsenic phosphorus phases are anticipated in small amounts. Coexistence of these phases are normal and anticipated.
Y. Chen et.al. Black Arsenic: A Layered Semiconductor with Extreme In‐Plane Anisotropy; Advanced Materials 2018; https://onlinelibrary.wiley.com/doi/full/10.1002/adma.201800754